bat41 document number 85659 rev. 1.6, 12-aug-10 vishay semiconductors www.vishay.com 1 94 9367 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diode features ? for general purpose applications ? this diode features low turn-on voltage and high breakdown voltage. this device is protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges ? this diode is also available in a minimelf case with type designation ll41 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parts table / absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature part ordering code type marking remarks bat41 bat41-tr or bat41-tap bat41 tape and reel/ammopack parameter test condition symbol value unit repetitive peak reverse voltage v rrm 100 v forward continuous current i f 100 1) ma repetitive peak forward current t p < 1 s, < 0.5 i frm 350 1) ma surge forward current t p = 10 ms i fsm 750 1) ma power dissipation t amb = 65 c p tot 200 1) mw
www.vishay.com 2 document number 85659 rev. 1.6, 12-aug-10 bat41 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature electrical characteristics t amb = 25 c, unless otherwise specified 2) pulse test, t p = 300 s typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit thermal resistance junction to ambient air r thja 300 1) k/w junction temperature t j 125 c ambient operating temperature range t amb - 65 to + 125 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol min. ty p. max. unit reverse breakdown voltage 2) i r = 100 a v (br) 100 110 v leakage current 2) v r = 50 v, t j = 25 c i r 100 na v r = 50 v, t j = 100 c i r 20 a forward voltage 2) i f = 1 ma v f 400 450 mv i f = 200 ma v f 1000 mv diode capacitance v r = 1 v, f = 1 mhz c d 2pf figure 1. admissible power dissi pation vs. ambient temperature 20225 t am b - am b ient temperat u re (c) p - po w er dissipation (m w ) tot 0 50 100 150 200 250 0 50 100 150 figure 2. typical reverse characteristics 100000 10000 1000 100 10 1 20226 v r - re v erse v oltage ( v ) i - re v erse leakage c u rrent (na) r 0 10203040506070 8 0 90 100 25 c t = 125 c 100 c 75 c 50 c j
bat41 document number 85659 rev. 1.6, 12-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter s (inches): do-35 figure 3. typical forward characteristics 0.01 0.1 100 10 1 1000 0 400 600 8 00 1000 1200 200 i- for w ard c u rrent (ma) f v f - for w ard v oltage (m v ) 1 8 641 t j = 125 c c 25 - 40 c figure 4. typical capacit ance vs. reverse voltage 20227 10 20 30 40 0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 c - diode capacitance (pf) d v r - re v erse v oltage ( v ) 1.0 0.5 0 15 25 35 5 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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